Semiconductor package and method of manufacturing the semiconductor package

ABSTRACT

A semiconductor package includes a support member, a semiconductor chip arranged in the support member such that a front surface and a backside surface of the semiconductor chip are exposed from a second surface of the support member and a first surface opposite to the second surface respectively, a lower redistribution wiring layer covering the second surface of the support member and including first redistribution wirings electrically connected to chip pads provided at the front surface of the semiconductor chip and vertical connection structures of the support member respectively, and an upper redistribution wiring layer covering the first surface of the support substrate, and including second redistribution wirings electrically connected to the vertical connection structures and a thermal pattern provided on the exposed backside surface of the semiconductor chip.

PRIORITY STATEMENT

This application claims priority under 35 U.S.C. § 119 to Korean PatentApplication No. 10-2020-0125861, filed on Sep. 28, 2020 in the KoreanIntellectual Property Office (KIPO), the contents of which are hereinincorporated by reference in their entirety.

BACKGROUND 1. Field

Example embodiments relate to a semiconductor package and a method ofmanufacturing the semiconductor package, more particularly to, a fan-outsemiconductor package and a method of manufacturing the same.

2. Description of the Related Art

A fan out package may include a frame surrounding a semiconductor chip,a front redistribution wiring layer provided on a lower surface of theframe, and a backside redistribution wiring layer on an upper surface ofthe frame. However, a sealing member such as an epoxy resin may beprovided between the semiconductor chip and the backside redistributionwiring layer. Since the sealing member has a relatively low thermalconductivity (about 0.3 W/(m·K)), there is a problem in that the heatdissipation efficiency of dissipating heat from the semiconductor chipto the outside may be deteriorated.

SUMMARY

Example embodiments provide a semiconductor package having excellentheat dissipation efficiency.

Example embodiments provide a method of manufacturing the semiconductorpackage.

According to example embodiments, a semiconductor package includes asupport member, a semiconductor chip arranged in the support member suchthat a front surface and a backside surface of the semiconductor chipare exposed from a second surface of the support member and a firstsurface opposite to the second surface respectively, a lowerredistribution wiring layer covering the second surface of the supportmember and the front surface of the semiconductor chip, and includingfirst redistribution wirings electrically connected to chip padsprovided at the front surface of the semiconductor chip and verticalconnection structures of the support member respectively, and an upperredistribution wiring layer covering the first surface of the supportsubstrate and the backside surface of the semiconductor chip, andincluding second redistribution wirings electrically connected to thevertical connection structures and a thermal pattern provided on theexposed backside surface of the semiconductor chip.

According to example embodiments, a semiconductor package includes asubstrate having a cavity, at least one semiconductor chip arrangedwithin the cavity, and having chip pads provided at a front surface ofthe semiconductor chip, a sealing layer covering a first surface of thesubstrate and filling the cavity such that a backside surface of thesemiconductor chip is exposed from the sealing layer, a lowerredistribution wiring layer covering a second surface of the coresubstrate opposite to the first surface and including firstredistribution wirings electrically connected to the chip pads, an upperredistribution wiring layer covering the first surface of the supportsubstrate and including second redistribution wirings electricallyconnected to core connection wirings and a thermal pattern provided onthe exposed backside surface of the semiconductor chip, and outerconnection members arranged on an outer surface of the lowerredistribution wiring layer and electrically connected to the firstredistribution wirings. The backside surface of the semiconductor chipis coplanar with an upper surface of the sealing layer, and a firstthickness of the thermal pattern has a value from 3 μm to 50 μm.

According to example embodiments, a semiconductor package includes alower redistribution wiring layer including first redistribution wiringsstacked in two levels, a semiconductor chip arranged on the lowerredistribution wiring layer and having chip pads provided at a frontsurface to be electrically connected to the first redistributionwirings. a support member on the lower redistribution wiring layer tosurround the semiconductor chip and exposing a backside surface of thesemiconductor chip, and an upper redistribution wiring layer on thesupport member and including second redistribution wirings electricallyconnected to vertical connection structures that penetrate at least aportion of the support member and a thermal pattern provided on theexposed backside surface of the semiconductor chip.

According to example embodiments, a semiconductor package as a fan-outpackage may include a semiconductor chip in a core substrate, a sealinglayer covering an upper surface of the core substrate and exposing abackside surface of the semiconductor chip, and an upper redistributionwiring layer provided on the backside surface of the semiconductor chipand the upper surface of the core substrate. The upper redistributionwiring layer may include redistribution wirings electrically connectedto conductive connection structures that penetrate the core substrateand a thermal pattern in thermal contact with the backside surface ofthe semiconductor chip. The thermal pattern may include a materialhaving a relatively high thermal conductivity such as copper (Cu).

Accordingly, there is no sealing member such as an epoxy resin betweenthe thermal pattern and the backside surface of the semiconductor chip,and the thermal pattern may be in direct thermal contact with thebackside surface of the semiconductor chip. Thus, heat from thesemiconductor chip may be effectively dissipated to the outside throughthe upper redistribution wiring layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings. FIGS. 1 to 51 represent non-limiting, example embodiments asdescribed herein.

FIG. 1 is a cross-sectional view illustrating a semiconductor package inaccordance with example embodiments.

FIG. 2 is an enlarged cross-sectional view illustrating portion ‘A’ inFIG. 1 .

FIG. 3 is a plan view illustrating first upper redistribution wiringsand a thermal pattern of an upper redistribution wiring layer in FIG. 1.

FIGS. 4 to 22 are views illustrating a method of manufacturing asemiconductor package in accordance with example embodiments.

FIG. 23 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments.

FIG. 24 is an enlarged cross-sectional view illustrating portion ‘B’ inFIG. 23 .

FIG. 25 is a plan view illustrating first upper redistribution wiringsand a thermal pattern of an upper redistribution wiring layer in FIG. 23.

FIGS. 26 to 31 are cross-sectional views illustrating a method ofmanufacturing a semiconductor package in accordance with exampleembodiments.

FIG. 32 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments.

FIG. 33 is an enlarged cross-sectional view illustrating portion ‘C’ inFIG. 32 .

FIGS. 34 to 39 are cross-sectional views illustrating a method ofmanufacturing a semiconductor package in accordance with exampleembodiments.

FIG. 40 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments.

FIG. 41 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments.

FIGS. 42 to 51 are cross-sectional views illustrating a method ofmanufacturing a semiconductor package in accordance with exampleembodiments.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Hereinafter, example embodiments will be explained in detail withreference to the accompanying drawings.

FIG. 1 is a cross-sectional view illustrating a semiconductor package inaccordance with example embodiments. FIG. 2 is an enlargedcross-sectional view illustrating portion ‘A’ in FIG. 1 . FIG. 3 is aplan view illustrating first upper redistribution wirings and a thermalpattern of an upper redistribution wiring layer in FIG. 1 .

Referring to FIGS. 1 to 3 , a semiconductor package 10 may include acore substrate 100, at least one semiconductor chip 200 provided in thecore substrate 100, a lower redistribution wiring layer 300 provided ona lower surface 104 of the core substrate 100, and an upperredistribution wiring layer 350 provided on an upper surface 102 of thecore substrate 100. The semiconductor package 10 may further includeouter connection members 400 provided on an outer surface of the lowerredistribution wiring layer 300.

In example embodiments, the semiconductor package 10 may include thecore substrate 100 provided as a support member which surrounds thesemiconductor chip 200 and supports the redistribution wiring layer in afan out region. The core substrate 100 may serve as a frame surroundingthe semiconductor chip 200. The core substrate 100 may include coreconnection wirings 120 which are provided in the fan out region outsidean area where the semiconductor chip 200 is arranged. The coreconnection wirings 120 may serve to function as an electrical connectionpath with the semiconductor chip 200. Accordingly, the semiconductorpackage 10 may be provided as a fan-out package. The semiconductorpackage 10 may be provided as a unit package on which a second packageis stacked.

Further, the semiconductor package 10 may be provided as aSystem-In-Package (SIP). For example, one or more semiconductor chip maybe arranged in the core substrate 100. The semiconductor chip mayinclude a logic chip including logic circuits and/or a memory chip. Thelogic chip may be a controller to control the memory chip. The memorychip may include various memory circuits such as dynamic random accessmemory (DRAM), static random access memory (SRAM), flash, phase-changerandom access memory (PRAM), resistive random access memory (ReRAM),ferroelectric random access memory (FeRAM), magnetic random accessmemory (MRAM), or the like.

In example embodiments, the core substrate 100 may have a first surface(upper surface) 102 and a second surface (lower surface) 104 opposite toeach other. The core substrate 100 may have a cavity 106 in the middleregion thereof. The cavity 106 may extend from the first surface 102 tothe second surface 104 of the core substrate 100.

The core substrate 100 may include a plurality of stacked insulationlayers 110, 112 and the core connection wirings 120 provided in theinsulation layers. A plurality of the core connection wirings 120 may beprovided in the fan out region outside an area where the semiconductorchip (die) is disposed, to be used for electrical connection with thesemiconductor chip mounted therein. The core connection wiring 120 maybe a vertical connection structure penetrating the core substrate 100from the first surface 102 to the second surface 104 of the coresubstrate 100.

For example, the core substrate 100 may include a first insulation layer110 and a second insulation layer 112 stacked on the first insulationlayer 110. The core connection wiring 120 may include a first metalwiring 122, a first contact 123, a second metal wiring 124 c, a secondcontact 125 and a third metal wiring 126. The first metal wiring 122 maybe provided in the second surface 104 of the core substrate 100, thatis, a lower surface of the first insulation layer 110, and at least aportion of the first metal wiring 122 may be exposed from the secondsurface 104. The third metal wiring 126 may be provided in the firstsurface 102 of the core substrate 100, that is, an upper surface of thesecond insulation layer 112, and at least a portion of the third metalwiring 126 may be exposed from the first surface 102. It may beunderstood that the numbers and arrangements of the insulation layersand the core connection wirings of the core substrate 100 may not belimited thereto.

In example embodiments, the semiconductor chip 200 may be disposedwithin the cavity 106 of the core substrate 100. A sidewall of thesemiconductor chip 200 may be spaced apart from an inner sidewall of thecavity 106. Accordingly, a gap may be formed between the sidewall of thesemiconductor chip 200 and the inner sidewall of the cavity 106.

The semiconductor chip 200 may include a substrate and chip pads 210 onan active surface, for example, a front surface 202 of the substrate. Inan embodiment, transistors of the semiconductor chip 200 may be formedin a region adjacent to the active surface of the substrate. Thesemiconductor chip 200 may be arranged such that the front surface 202on which the chip pads 210 of the semiconductor chip 200 are formedfaces downward. Accordingly, the chip pads 210 may be exposed from thesecond surface 104 of the core substrate 100. The front surface 202 ofthe semiconductor chip 200 may be coplanar with the second surface 104of the core substrate 100. A backside surface 204 opposite to the frontsurface 202 of the semiconductor chip 200 may be positioned higher thanthe first surface 102 of the core substrate 100. A thickness of thesemiconductor chip 200 may be greater than a thickness of the coresubstrate 100. The thickness of the semiconductor chip 200 may have avalue from 60 μm to 150 μm, and the thickness of the core substrate 100may have a value from 50 μm to 130 μm.

In example embodiments, a sealing layer 130 may be provided on the firstsurface 102 of the core substrate 100 to fill the cavity 106 and exposethe backside surface 204 of the semiconductor chip 200. The sealinglayer 130 may have openings that expose the third metal wirings 126 ofthe core connection wirings 120. The backside surface 204 of thesemiconductor chip 200 may be coplanar with an upper surface 132 of thesealing layer 130.

The sealing layer 130 may be formed to fill the gap between the sidewallof the semiconductor chip 200 and the inner sidewall of the cavity 106.Accordingly, the sealing layer 130 may cover the sidewall of thesemiconductor chip 200, the first surface 102 of the core substrate 100and the inner sidewall of the cavity 106.

For example, the sealing layer 130 may include a thermosetting resinsuch as epoxy resin, a thermoplastic resin such as polyimide, a resinincluding reinforcing materials such as inorganic fillers, etc. Forexample, the sealing layer 130 may include an insulation film such asABF (Ajinomoto Build-up Film), a composite material such as FR-4, aresin such as BT (Bismaleimide Triazine), etc. The sealing layer 130 mayinclude a molding material such as Epoxy Molding Compound (EMC), aphotosensitive insulating material such as PIE (Photo ImageableEncapsulant), etc.

In example embodiments, the lower redistribution wiring layer 300 may bearranged on the second surface 104 of the core substrate 100 and thefront surface of the semiconductor chip 200. The lower redistributionwiring layer 300 may include first redistribution wirings 302electrically connected to the chip pads 210 of the semiconductor chip200 and the core connection wirings 120. The first redistributionwirings 302 may be provided on the front surface 202 of thesemiconductor chip 200 and the second surface 104 of the core substrate100 to function as a front side redistribution wiring. Accordingly, thelower redistribution wiring layer 300 may be a front redistributionwiring layer of a fan out package.

For example, the lower redistribution wiring layer 300 may include afirst lower redistribution wiring layer provided on a first lowerinsulation layer 310 and having first lower redistribution wirings 312.

The first lower insulation layer 310 may be provided on the secondsurface 104 of the core substrate 100 and may have first openings thatexpose the chip pads 210 of the semiconductor chip 200 and the firstmetal wirings 122 of the core connection wirings 120, respectively. Thefirst lower redistribution wirings 312 may be provided on the firstlower insulation layer 310, and portions of the first lowerredistribution wirings 312 may contact the chip pads 210 and the firstmetal wirings 122 through the first openings, respectively. It will beunderstood that when an element is referred to as being “connected” or“coupled” to or “on” another element, it can be directly connected orcoupled to or on the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, or as “contacting”or “in contact with” another element, there are no intervening elementspresent at the point of contact.

The lower redistribution wiring layer 300 may include a second lowerredistribution wiring layer provided on a second lower insulation layer320 and having second lower redistribution wirings 322.

The second lower insulation layer 320 may be provided on the first lowerinsulation layer 310 and may have second openings that expose the firstlower redistribution wirings 312, respectively. The second lowerredistribution wirings 322 may be provided on the second lowerinsulation layer 320, and portions of the second lower redistributionwirings 322 may contact the first lower redistribution wirings 312through the second openings, respectively.

The lower redistribution wiring layer 300 may include a third lowerredistribution wiring layer provided on a third lower insulation layer330 and having third lower redistribution wirings 332.

The third lower insulation layer 330 may be provided on the second lowerinsulation layer 320 and may have third openings that expose the secondlower redistribution wirings 322, respectively. The third lowerredistribution wirings 332 may be provided on the third lower insulationlayer 330 and portions of the third lower redistribution wirings 332 maycontact the second lower redistribution wirings 322 through the thirdopenings, respectively.

The lower redistribution wiring layer 300 may include a fourth lowerinsulation layer 340 provided on the third lower insulation layer 330 toexpose portions of the third lower redistribution wirings 332. Thefourth lower insulation layer 340 may serve as a passivation layer. Abump pad (not illustrated) such as UBM (Under Bump Metallurgy) may beprovided on the portion of the third lower redistribution wiring 332exposed by the fourth lower insulation layer 340. The exposed portion ofthe third lower redistribution wiring 332 may serve as a landing pad,that is, a package pad.

For example, the first to third lower insulation layers may include apolymer layer, a dielectric layer, etc. The first to third lowerredistribution wirings may include aluminum (Al), copper (Cu), tin (Sn),nickel (Ni), gold (Au), platinum (Pt) or an alloy thereof. A thicknessof each of the first to third lower redistribution wirings may have avalue from 3 μm to 8 μm.

Accordingly, the lower redistribution wiring layer 300 may be providedon the front surface 202 of the semiconductor chip 200 and the secondsurface 104 of the core substrate 100 and may include the firstredistribution wirings 302 electrically connected to the chip pads 210and the core connection wirings 120, respectively. The lowerredistribution wiring layer 300 may cover the second surface 104 of thecore substrate 100 provided in an area (fan out region) outside thesemiconductor chip 200. Some of the first redistribution wirings 302 mayelectrically connect the chip pads 210 of the semiconductor chip 200 andthe core connection wirings 120 of the core substrate 100. It may beunderstood that the number, sizes, arrangements, etc. of the lowerinsulation layers and the lower redistribution wirings of the lowerredistribution wiring layer are exemplarily illustrated, and thus, itmay not be limited thereto.

In example embodiments, the upper redistribution wiring layer 350 may beprovided on the first surface 102 of the core substrate 100 and thebackside surface 204 of the semiconductor chip 200 and may includesecond redistribution wirings 352 electrically connected to the coreconnection wirings 120. The second redistribution wirings 352 may beprovided on the backside surface 204 of the semiconductor chip 200 andthe first surface 102 of the core substrate 100 to function as abackside redistribution wiring. Accordingly, the upper redistributionwiring layer 350 may be a backside redistribution wiring layer of a fanout package.

The upper redistribution wiring layer 350 may include first and secondupper metal patterns 372, 382 stacked in two levels. The first uppermetal pattern 372 may include a thermal pattern 374 and a first upperredistribution wiring 376. The second upper metal pattern 382 mayinclude a metal pattern 384 and a second upper redistribution wiring386. The second redistribution wirings 352 may include the first andsecond upper redistribution wirings 376, 386 stacked in two levels.

For example, the upper redistribution wiring layer 350 may include afirst upper redistribution wiring layer having the thermal pattern 374arranged on the backside surface 204 of the semiconductor chip 200 andthe first upper redistribution wiring 376 electrically connected to thecore connection wiring 120.

The upper redistribution wiring layer 350 may further include a seedlayer 370 as a barrier layer provided between the thermal pattern 374and the backside surface 204 of the semiconductor chip 200. The thermalpattern 374 and the first upper redistribution wiring 376 may be formedby a plating process using the seed layer 370. The thermal pattern 374may be provided to cover the entire backside surface 204 of thesemiconductor chip 200. Because the thermal pattern 374 and the firstupper redistribution wiring 376 are formed together by the platingprocess, the thermal pattern 374 may be located on the same plane as thefirst upper redistribution wiring 376.

For example, the thermal pattern 374 and the first upper redistributionwiring 376 may include or may be formed of copper (Cu), silver (Ag),gold (Au), nickel (Ni), platinum (Pt), aluminum (Al), etc., orcombinations thereof A thickness T1 of the thermal pattern 374 may havea value from 3 μm to 50 μm.

The seed layer 370 may include an alloy layer including titanium/copper(Ti/Cu), titanium/palladium (Ti/Pd), titanium/nickel (Ti/Ni),chrome/copper (Cr/Cu) or a combination thereof. A thickness T2 of theseed layer 370 may have a value from 0.1 μm to 0.5 μm.

When the seed layer 370 includes titanium (Ti), the seed layer 370 mayhave a relatively high adhesive strength (0.5 kgf/cm² or more) withsilicon. Accordingly, the seed layer 370 may serve as an adhesive layerthat attaches the thermal pattern 374 to the backside surface 204 of thesemiconductor chip 200. For example, the adhesive layer may be athermally conductive adhesive paste or film such as a die attach film(DAF).

As illustrated in FIG. 3 , the semiconductor package 10 including thecore substrate 100 may have a rectangle shape, when the semiconductorpackage 10 is viewed in a plan view. The thermal pattern 374 may have aplanar area corresponding to the backside surface 204 of thesemiconductor chip 200. For example, the thermal pattern 374 may have anarea of at least 80% of a package area.

When the thermal pattern 374 includes or is formed of copper (Cu), sincea thermal conductivity of copper (Cu) is 401 W/(m·K), the thermalpattern 374 may be in direct thermal contact with the backside surface204 of the semiconductor chip 200 to effectively dissipate heat from thesemiconductor chip 200. For example, the thermal pattern 374 may contactthe backside surface 204 of the semiconductor chip 200 with or without athermal conductive adhesive paste or film therebetween.

The thermal pattern 374 may include a ground pattern. The first upperredistribution wiring 376 may include a signal pattern. The first uppermetal pattern 372 may include a ground pattern arranged around thesignal pattern in the fan out region. The ground pattern may include ametal pattern having a plurality of through holes. The through hole mayhave a cylindrical or polygonal column shape. The through hole may serveto discharge a gas in the insulation film in a package process such as acuring process.

In example embodiments, the upper redistribution wiring layer 350 mayfurther include a protective layer pattern 360 provided on the uppersurface 132 of the sealing layer 130. The protective layer pattern 360may have openings that expose the backside surface 204 of thesemiconductor chip 200 and the third metal wirings 26 of the coreconnection wirings 120.

For example, the protective layer pattern 360 may an insulation materialsuch as PID (Photo Imageable Dielectric). Because the protective layerpattern 360 covers the upper surface 132 of the sealing layer 130,fillers within the sealing layer 130 may be prevented from escaping fromthe sealing layer 130 including an insulation film such as ABF(Ajinomoto Build-up Film) during a sputtering process for forming theseed layer.

The upper redistribution wiring layer 350 may include a first upperinsulation layer 380 covering the first upper redistribution wiringlayer, and a second upper redistribution wiring layer on the first upperinsulation layer 380 and having the metal pattern 384 arranged on thethermal pattern 374 and the second upper redistribution wirings 386electrically connected to the first upper redistribution wiring 376. Themetal pattern 384 may include a ground pattern GP electrically connectedto the thermal pattern 374. The ground pattern GP of the metal pattern384 may contact portions of the thermal pattern 374 through a pluralityof openings OP formed in the first upper insulation layer 380. Theopenings OP may penetrate the first upper insulation layer 380 to exposethe thermal pattern 374. The thermal pattern 374 may be disposed betweenthe metal pattern 384 and the backside surface 204 of the semiconductorchip 200 or between the ground pattern 384 and the backside surface 204of the semiconductor chip 200.

For example, the metal pattern and the second upper redistributionwiring may include copper (Cu), silver (Ag), gold (Au), nickel (Ni),platinum (Pt), aluminum (Al), etc. A thickness of each of the metalpattern 384 and the second upper redistribution wiring 386 may have avalue from 3 μm to 8 μm. The thicknesses of the metal pattern 384 andthe second upper redistribution wiring 386 may be the same as thethickness of each of the lower redistribution wirings 312, 322, 332. Thepresent inventive concept is not limited thereto. For example, thethicknesses of the metal pattern 384 and the second upper redistributionwiring 386 may be different from the thickness of each of the lowerredistribution wirings 312, 322, 332.

The upper redistribution wiring layer 350 may include a second upperinsulation layer 390 provided on the first upper insulation layer 380 toexpose portions of the second upper redistribution wirings 386. Thesecond upper insulation layer 390 may serve as a passivation layer. Abump pad (not illustrated) such as UBM (Under Bump Metallurgy) may beprovided on the portion of the second upper redistribution wiring 386exposed by the second upper insulation layer 390. The exposed portion ofthe second upper redistribution wiring 386 may serve as a landing pad,that is, a package pad.

The first and second insulation layers may include an insulationmaterial such as epoxy resin (thermoset dielectric material), a photoimageable dielectric (PID) material, an insulation film such as ABF(Ajinomoto Build-up Film), etc.

In example embodiments, the outer connection members 400 may be providedon the package pads on the outer surface of the lower redistributionwiring layer 300, respectively. For example, the outer connection member400 may include a solder ball. The solder ball may have a diameter of300 μm to 500 μm. The semiconductor package 10 may be mounted on amodule substrate (not illustrated) via the solder balls to constitute amemory module.

As mentioned above, the semiconductor package 10 as the fan-out panellevel package may include the upper redistribution wiring layer 350provided on the backside surface 204 of the semiconductor chip 200exposed by the core substrate 100 and the sealing layer 130, andprovided on the first surface 102 of the core substrate 100. The upperredistribution wiring layer 350 may include the thermal pattern 374 inthermal contact with the backside surface 204 of the semiconductor chip200. For example, the thermal pattern 374 may contact the backsidesurface 204 of the semiconductor chip 200 with or without a thermalconductive adhesive paste or film therebetween. The thermal pattern 374may include a material having a relatively high thermal conductivitysuch as copper (Cu).

Accordingly, there is no sealing member such as an epoxy resin betweenthe thermal pattern 374 and the backside surface 204 of thesemiconductor chip 200, and the thermal pattern 374 may be in directthermal contact with the backside surface 204 of the semiconductor chip200. Thus, heat from the semiconductor chip 200 may be effectivelydissipated to the outside through the upper redistribution wiring layer350.

Hereinafter, a method of manufacturing the semiconductor package in FIG.1 will be explained.

FIGS. 4 to 22 are views illustrating a method of manufacturing asemiconductor package in accordance with example embodiments. FIG. 4 isa plan view illustrating a panel having a plurality of core substratesformed therein. FIGS. 5 to 22 are cross-sectional views taken along theline I-I′ in FIG. 4 .

Referring to FIGS. 4 to 7 , first, a panel P having a plurality of coresubstrates 100 formed therein may be prepared, a semiconductor chip 200may be arranged in a cavity of the core substrate 100, and then, asealing layer 130 may be formed to cover the semiconductor chip 200.

In example embodiments, the core substrate 100 may be used as a supportframe for electrical connection for manufacturing a semiconductorpackage having a fan-out panel level package configuration.

As illustrated in FIG. 4 , the panel P may include a frame region FR onwhich the core substrate 100 is formed and a scribe lane region, thatis, cutting region CA surrounding the frame region FR. As describedlater, the panel P may be sawed along the cutting region CA dividing theframe regions FR to form an individual core substrate 100.

The core substrate 100 may have a first surface 102 and a second surface104 opposite to each other. The core substrate 100 may have the cavity106 in a middle region of the frame region FR. As described later, thecavity 106 may have an area for receiving at least one semiconductorchip.

The core substrate 100 may include a plurality of stacked insulationlayers 110, 112 and core connection wirings 120 provided in theinsulation layers. A plurality of the core connection wirings 120 may beprovided to penetrate through the core substrate 100 from the firstsurface 102 to the second surface 104 of the core substrate 100 tofunction as an electrical connection path. For example, the coreconnection wirings 120 may be provided in a fan out region outside anarea where the semiconductor chip (die) is disposed to be used forelectrical connection. For example, the core connection wiring 120 mayinclude a first metal wiring 122, a first contact 123, a second metalwiring 124 c, a second contact 125 and a third metal wiring 126.

As illustrated in FIGS. 5 and 6 , the panel P may be arranged on abarrier tape 20, and then the at least one semiconductor chip 200 may bearranged within the cavity 106.

The second surface 104 of the core substrate 100 may be adhered on thebarrier tape 20. For example, about 200 to about 6,000 dies (chips) maybe arranged in the cavities 106 of the panel P, respectively. Asdescribed later, a singulation process may be performed to saw the panelP to complete a fan-out panel level package. Alternatively, a pluralityof semiconductor chips 200 may be arranged within one cavity 106. Termssuch as “about” or “approximately” may reflect amounts, sizes,orientations, or layouts that vary only in a small relative manner,and/or in a way that does not significantly alter the operation,functionality, or structure of certain elements. For example, a rangefrom “about 0.1 to about 1” may encompass a range such as a 0%-5%deviation around 0.1 and a 0% to 5% deviation around 1, especially ifsuch deviation maintains the same effect as the listed range.

The semiconductor chip 200 may include a substrate and chip pads 210 onan active surface, which is a front surface 202 of the substrate. In anembodiment, transistors of the semiconductor chip 200 may be formed in aregion adjacent to the active surface of the substrate. Thesemiconductor chip 200 may be arranged such that the front surface onwhich the chip pads 210 are formed faces downward the barrier tape 20.The front surface 202 of the semiconductor chip 200 may be coplanar withthe second surface 104 of the core substrate 100.

The semiconductor chip 200 may be disposed within the cavity 106 of thecore substrate 100. A sidewall of the semiconductor chip 200 may bespaced apart from an inner sidewall of the cavity 106. Accordingly, agap may be formed between the sidewall of the semiconductor chip 200 andthe inner sidewall of the cavity 106.

A thickness of the semiconductor chip 200 may be greater than athickness of the core substrate 100. Accordingly, a backside surface 204of the semiconductor chip 200 may be positioned higher than the firstsurface 102 of the core substrate 100.

As illustrated in FIG. 7 , the sealing layer 130 may be formed on thefirst surface 102 of the core substrate 100 to cover the semiconductorchip 200. The sealing layer 130 may be formed to fill the gap betweenthe sidewall of the semiconductor chip 200 and the inner sidewall of thecavity 106. Accordingly, the sealing layer 130 may cover the backsidesurface 204 of the semiconductor chip 200, the first surface 102 of thecore substrate 100 and the inner sidewall of the cavity 106.

For example, the sealing layer 130 may include a thermosetting resinsuch as epoxy resin, a thermoplastic resin such as polyimide, a resinincluding reinforcing materials such as inorganic fillers, etc. Forexample, the sealing layer may include an insulation film such as ABF(Ajinomoto Build-up Film), a composite material such as FR-4, a resinsuch as BT (Bismaleimide Triazine), etc. The sealing layer may include amolding material such as Epoxy Molding Compound (EMC), a photosensitiveinsulating material such as PIE (Photo Imageable Encapsulant), etc. Whenthe sealing layer 130 includes an insulating film such as ABF, thesealing layer 130 may be formed by a lamination process.

Referring to FIGS. 8 to 10 , the structure in FIG. 7 may be reversed,and then, a lower redistribution wiring layer 300 may be formed on thesecond surface 104 of the core substrate 100 and the front surface 202of the semiconductor chip 200. The lower redistribution wiring layer 300including first redistribution wirings 302 electrically connected to thechip pads 210 of the semiconductor chip 200 and the core connectionwirings 120 respectively may be formed on the second surface 104 of thecore substrate 100 and the front surface 202 of the semiconductor chip200. The lower redistribution wiring layer 300 may be a frontredistribution wiring layer of a fan out package.

As illustrated in FIG. 8 , after removing the barrier tape 20, thestructure in FIG. 7 may be reversed, and the sealing layer 130 may beadhered on a first carrier substrate C1. Then, a first lower insulationlayer 310 may be formed on the second surface 104 of the core substrate100 and the front surface 202 of the semiconductor chip 200, and then,the first lower insulation layer 310 may be patterned to form firstopenings 311 that expose the chip pads 210 of the semiconductor chip 200and the first metal wirings 122 of the core connection wiring 120,respectively.

For example, the first lower insulation layer 310 may include a polymerlayer, a dielectric layer, etc. The first lower insulation layer may beformed by a vapor deposition process, a spin coating process, etc.

As illustrated in FIG. 9 , a first lower redistribution wiring layerincluding first lower redistribution wirings 312 may be formed on thefirst lower insulation layer 310. The first lower redistribution wirings312 may contact the chip pads 210 and the first metal wirings 122through the first openings, respectively.

In example embodiments, the first lower redistribution wiring 312 may beformed on portions of the first lower insulation layer 310, the chippads 210 and the first metal wirings 122. The first redistributionwiring may be formed by forming a seed layer on a portion of the firstlower insulation layer 310 and in the first opening, patterning the seedlayer and performing an electro plating process. Accordingly, at leastportions of the first lower redistribution wirings 312 may contact thechip pads 210 and the first metal wirings 122 through the firstopenings. The third dummy pattern 314 may be formed by the same processas the first redistribution wirings 312.

For example, the first redistribution wiring may include aluminum (Al),copper (Cu), tin (Sn), nickel (Ni), gold (Au), platinum (Pt) or an alloythereof. A thickness of the first lower redistribution wiring layer mayhave a value from 3 μm to 8 μm.

As illustrated in FIG. 10 , a second lower insulation layer 320 may beformed on the first lower insulation layer 310, and then, the secondlower insulation layer 320 may be patterned to form second openings thatexpose the first lower redistribution wirings 312, respectively. Then, asecond redistribution wiring layer including second lower redistributionwirings 322 may be formed on the second lower insulation layer 320. Thesecond lower redistribution wirings 322 may contact the first lowerredistribution wirings 312 through the second openings, respectively.

Similarly, a third lower insulation layer 330 may be formed on thesecond lower insulation layer 320, and then, the third lower insulationlayer 330 may be patterned to form third openings that expose the secondlower redistribution wirings 322, respectively. Then, a third lowerredistribution wiring layer including third lower redistribution wirings332 may be formed on the third lower insulation layer 330. Then, afourth lower insulation layer 340 may be formed on the third lowerinsulation layer 330 to cover the third lower redistribution wirings332.

The fourth lower insulation layer 340 may serve as a passivation layer.The fourth lower insulation layer 340 may be partially removed by anopening forming process to expose portions of the third lowerredistribution wirings 332. A bump pad such as UBM (Under BumpMetallurgy) may be formed on the portion of the third lowerredistribution wiring 332 exposed by the fourth lower insulation layer340.

Referring to FIG. 11 , the first carrier substrate C1 may be removed,the structure in FIG. 10 may be reversed, and then, the lowerredistribution wiring layer 300 may be adhered on a second carriersubstrate C2. Accordingly, an upper surface 132 of the sealing layer 130may be exposed.

Referring to FIG. 12 , the upper surface 132 of the sealing layer 130may be grinded to expose the backside surface 204 of the semiconductorchip 200. Such grinding may partially remove the backside surface 204 ofthe semiconductor chip 200.

The upper surface 132 of the sealing layer 130 and the backside surface204 of the semiconductor chip 200 may be grinded by a grinding processsuch as a chemical mechanical polishing process. Thus, the backsidesurface 204 of the semiconductor chip 200 may be coplanar with the uppersurface 132 of the sealing layer 130. The sidewall of the semiconductorchip 200, the first surface 102 of the core substrate 100 and the innerwall of the cavity 106 may be covered by the sealing layer 130.

Referring to FIGS. 13 to 21 , an upper redistribution wiring layer 350may be formed on the sealing layer 130 on the first surface 102 of thecore substrate 100 and the backside surface 204 of the semiconductorchip 200. The upper redistribution wiring layer 350 including secondredistribution wirings electrically connected to the core connectionwirings 120 and a thermal pattern 374 may be formed on the sealing layer130 of the first surface 102 of the core substrate 100 and the backsidesurface 204 of the semiconductor chip 200. The upper redistributionwiring layer 350 may be a backside redistribution wiring layer.

As illustrated in FIG. 13 , the sealing layer 130 on the first surface102 of the core substrate 100 may be partially removed to form fourthopenings 134 that expose portions of the third metal wirings 126 of thecore connection wirings 120.

For example, the fourth openings 134 may be formed using a laser.Examples of the laser may be CO₂ laser, YAG laser, excimer laser, UVlaser, etc.

As illustrated in FIG. 14 , a protective layer pattern 360 may be formedon the upper surface 132 of the sealing layer 130. The protective layerpattern 360 may expose the backside surface 204 of the semiconductorchip 200. The protective layer pattern 360 may have fourth openings thatare connected to the fourth openings, respectively. Accordingly, theprotective layer pattern 360 may expose the third metal wirings 126 ofthe core connection wirings 120.

For example, the protective layer pattern 360 may be formed by forming aprotective layer such as PID (Photo Imageable Dielectric) on the uppersurface 132 of the sealing layer 130 and the backside surface 204 of thesemiconductor chip 200 and patterning the protective layer to form thefifth openings that expose the backside surface 204 of the semiconductorchip 200 and the third metal wirings 126 of the core connection wirings120.

As illustrated in FIG. 15 , a seed layer 370 may be formed on thebackside surface 204 of the semiconductor chip 200 and the third metalwirings 126 of the core connection wiring 120 exposed by the protectivelayer pattern 360, and a photoresist pattern 30 having openings 31 thatexpose the semiconductor chip 200 and portions of the seed layer may beformed on the seed layer 370.

For example, the seed layer 370 may be formed by a sputtering process.The seed layer 370 may include an alloy layer including titanium/copper(Ti/Cu), titanium/palladium (Ti/Pd), titanium/nickel (Ti/Ni),chrome/copper (Cr/Cu) or a combination thereof. A thickness of the seedlayer 370 may have a value from 0.1 μm to 0.5 μm.

Because the protective layer pattern 360 covers the upper surface 132 ofthe sealing layer 130, the fillers within the sealing layer 130 may beprevented from escaping from the sealing layer 130 including aninsulation film such as ABF (Ajinomoto Build-up Film) during thesputtering process.

The photoresist layer may be formed on the upper surface 132 of thesealing layer 130 and the backside surface 204 of the semiconductor chip200, and an exposure process may be performed on the photoresist patternto form the photoresist pattern 30 having the openings 31 that exposethe semiconductor chip 200 and the portions of the seed layer 370.

As illustrated in FIGS. 16 and 17 , an electroplating process may beformed on the seed layer 370 to form a first upper redistribution wiringlayer including first upper metal patterns 372 having a metal material,and the photoresist pattern 30 may be removed to form the thermalpattern 374 arranged on the backside surface 204 of the semiconductorchip 200 and first upper redistribution wirings 376 electricallyconnected to the core connection wirings 120. With the removal of thephotoresist pattern 30, the seed layer 370 under the photoresist pattern30 may be partially etched.

The thermal pattern 374 may be formed to cover the entire backsidesurface 204 of the semiconductor chip 200. Because the thermal pattern374 and the first upper redistribution wirings 376 are formed together,the thermal pattern 374 may be coplanar with the first upperredistribution wiring 376.

The thermal pattern 374 may include a ground pattern. The first upperredistribution wiring 376 may include a signal pattern. The first uppermetal pattern 372 may include a ground pattern (not illustrated)arranged around the signal pattern in the fan out region. The groundpattern may include a metal pattern having a plurality of through holes.The through hole may have a cylindrical or polygonal column shape. Thethrough hole may serve to discharge a gas in the insulation film in apackage process such as a curing process.

For example, the metal material may include a metal such as copper (Cu),silver (Ag), gold (Au), nickel (Ni), platinum (Pt), aluminum (Al), etc.A thickness of the thermal pattern 374 may have a value from 3 μm to 50μm. The thickness of the thermal pattern 374 may be the same as athickness of the first upper redistribution wiring 376. The presentinventive concept is not limited thereto. For example, the thickness ofthe thermal pattern 374 may be the different from a thickness of thefirst upper redistribution wiring 376.

When the thermal pattern 374 includes copper (Cu), since a thermalconductivity of copper (Cu) is 401 W/(m·K), the thermal pattern 374 maybe in direct thermal contact with the backside surface 204 of thesemiconductor chip 200 to effectively dissipate heat from thesemiconductor chip 200.

As illustrated in FIG. 18 , a first upper insulation layer 380 may beformed on the first surface 102 of the core substrate 100 and thebackside surface 204 of the semiconductor chip 200, and then, the firstupper insulation layer 380 may be patterned to form sixth openings 381that expose the first upper metal patterns 372, respectively. The sixthopenings 381 may expose portions of the thermal pattern 374 and thefirst upper redistribution wirings 376.

For example, the first upper insulation layer may include an insulationmaterial such as epoxy resin (thermoset dielectric material), a photoimageable dielectric (PID) material, an insulation film such as ABF(Ajinomoto Build-up Film), etc.

As illustrated in FIG. 19 , a second upper redistribution wiring layerincluding second upper metal patterns 382 may be formed on the firstupper insulation layer 380. The second upper metal patterns 382 mayinclude second upper redistribution wirings 386 electrically connectedto the first upper redistribution wirings 376. The second upper metalpatterns 382 may further include a metal pattern 384 electricallyconnected to the thermal pattern 374. The metal pattern 384 may includea ground pattern. As shown in FIG. 2 , the metal pattern 384 may includea ground pattern GP electrically connected to the thermal pattern 374.The ground pattern GP of the metal pattern 384 may contact portions ofthe thermal pattern 374 through a plurality of openings OP formed in thefirst upper insulation layer 380. The openings OP may penetrate thefirst upper insulation layer 380 to expose the thermal pattern 374. Thethermal pattern 374 may be disposed between the metal pattern 384 andthe backside surface 204 of the semiconductor chip 200 or between theground pattern 384 and the backside surface 204 of the semiconductorchip 200.

For example, the second upper redistribution wirings may include copper(Cu), silver (Ag), gold (Au), nickel (Ni), platinum (Pt), aluminum (Al),etc. A thickness of the second upper redistribution wiring may have avalue from 3 μm to 8 μm. The thickness of the second upperredistribution wirings may be the same as the thickness of each of thelower redistribution wirings 312, 322, 332. The present inventiveconcept is not limited thereto. For example, the thickness of the secondupper redistribution wirings may be different from the thickness of eachof the lower redistribution wirings 312, 322, 332.

As illustrated in FIGS. 20 and 21 , a second upper insulation layer 390may be formed on the first upper insulation layer 380, and then, thesecond upper insulation layer 390 may be patterned to form sevenopenings 391 that expose the second upper redistribution wirings,respectively.

The second upper insulation layer 390 may serve as a passivation layer.A bump pad such as UBM (Under Bump Metallurgy) may be formed on aportion of the second upper redistribution wiring exposed by the secondupper insulation layer 390 by a following pad forming process.

Referring to FIG. 22 , outer connection members 400 may be formed on anouter surface of the lower redistribution wiring layer 300 to beelectrically connected to the first redistribution wirings 302,respectively.

For example, a solder ball as the outer connection member may bedisposed on the portion of the third lower redistribution wiring 332.The portion of the third lower redistribution wiring 332 may serve as alanding pad, that is, a package pad. Thus, semiconductor manufacturingprocesses may be performed to form the lower redistribution wiring layer300 having fan-out type solder ball landing pads.

Then, a sawing process may be performed on the core substrate 100 toform an individual fan-out panel level package including the coresubstrate 100, the lower redistribution wiring layer 300 formed on thelower surface of the core substrate 100 and the upper redistributionwiring layer 350 formed on the upper surface of the core substrate 100.

FIG. 23 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments. FIG. 24 is an enlargedcross-sectional view illustrating portion ‘B’ in FIG. 23 . FIG. 25 is aplan view illustrating first upper redistribution wirings and a thermalpattern of an upper redistribution wiring layer in FIG. 23 . Thesemiconductor package may be substantially the same as or similar to thesemiconductor package described with reference to FIG. 1 except for aconfiguration of a thermal pattern and a protective layer pattern. Thus,same reference numerals will be used to refer to the same or likeelements and any further repetitive explanation concerning the aboveelements will be omitted. Terms such as “same,” “equal,” “planar,” or“coplanar,” as used herein when referring to orientation, layout,location, shapes, sizes, amounts, or other measures do not necessarilymean an exactly identical orientation, layout, location, shape, size,amount, or other measure, but are intended to encompass nearly identicalorientation, layout, location, shapes, sizes, amounts, or other measureswithin acceptable variations that may occur, for example, due tomanufacturing processes. The term “substantially” may be used herein toemphasize this meaning, unless the context or other statements indicateotherwise. For example, items described as “substantially the same,”“substantially equal,” or “substantially planar,” may be exactly thesame, equal, or planar, or may be the same, equal, or planar withinacceptable variations that may occur, for example, due to manufacturingprocesses.

Referring to FIGS. 23 to 25 , an upper redistribution wiring layer 350of a semiconductor package 11 may include first and second upper metalpatterns 372, 382 stacked in two levels. The first upper metal pattern372 may include a thermal pattern 374 a and a first upper redistributionwiring 376. The second upper metal pattern 382 may include a metalpattern 384 and a second upper redistribution wiring 386. Secondredistribution wirings 352 may include the first and second upperredistribution wirings 376, 386 stacked in two levels.

In example embodiments, a protective layer pattern 360 arranged on abackside surface 204 of the semiconductor chip 200 may have a gridpattern. The grid pattern of the protective layer pattern 360 mayinclude a plurality of crossing lines extending respectively in Xdirection and Y direction on the backside surface 204 of thesemiconductor chip 200.

A seed layer 370 may be provided on the backside surface 204 of thesemiconductor chip 200 exposed by the grid pattern of the protectivelayer pattern 360.

As illustrated in FIG. 25 , because the thermal pattern 374 a is formedon the seed layer 370 on the backside surface 204 of the semiconductorchip 200, the thermal pattern 374 a may include a metal pattern of agrid shape covering the backside surface 204 of the semiconductor chip200.

Alternatively, when the protective layer pattern 360 on the backsidesurface 204 of the semiconductor chip 200 has an array shape of aplurality of holes, the thermal pattern 374 a may also have an arrayshape corresponding thereto.

Hereinafter, a method of manufacturing the semiconductor package in FIG.23 will be explained.

FIGS. 26 to 31 are cross-sectional views illustrating a method ofmanufacturing a semiconductor package in accordance with exampleembodiments.

Referring to FIG. 26 , processes which are the same as or similar to theprocesses described with reference to FIGS. 4 to 13 may be performed toform a sealing layer 130 covering a first surface 102 of a coresubstrate 100 and exposing a backside surface 204 of the semiconductorchip 200, and then, a protective layer pattern 360 may be formed on anupper surface 132 of the sealing layer 130 and the backside surface 204of the semiconductor chip 200.

For example, a protective layer such as PID (Photo Imageable Dielectric)may be formed on the upper surface 132 of the sealing layer 130 and thebackside surface 204 of the semiconductor chip 200, and then, theprotective layer may be patterned to form openings that expose thebackside surface 204 of the semiconductor chip 200 and third metalwirings 126 of core connection wirings 120, to form the protective layerpattern 360.

The protective layer pattern 360 formed on the backside surface 204 ofthe semiconductor chip 200 may have a grid pattern. The grid pattern ofthe protective layer pattern 360 may include a plurality of crossinglines extending respectively in X direction and Y direction on thebackside surface 204 of the semiconductor chip 200.

Referring to FIG. 27 , a seed layer 370 may be formed on the backsidesurface 204 of the semiconductor chip 200 and the third metal wirings126 of the core connection wirings 120. For example, the seed layer 370may be formed by a sputtering process.

Referring to FIGS. 28 and 29 , a photoresist pattern 30 having openingsthat expose the semiconductor chip 200 and portions of the seed layer onthe third metal wirings 126 may be formed on the seed layer 370, andthen, a plating process may be performed on the seed layer 370 to form afirst upper redistribution wiring layer including first upper metalpatterns 372 including a metal material. Then, the photoresist pattern30 may be removed and the seed layer 370 under the photoresist pattern30 may be etched.

For example, a photoresist layer may be formed on the upper surface 132of the sealing layer 130 and the backside surface 204 of thesemiconductor chip 200, and then, ex exposure process may be performedon the photoresist layer to form the photoresist pattern 30 having theopenings that expose the semiconductor chip 200 and the portions of theseed layer on the third metal wirings 126.

The photoresist pattern 30 formed on the backside surface 204 of thesemiconductor chip 200 may be formed to have a grid shape correspondingto the shape of the protective layer pattern 306. For example, when theprotective layer pattern 360 on the backside surface 204 of thesemiconductor chip 200 has an array shape of a plurality of holes, thephotoresist pattern 30 may also have an array shape correspondingthereto.

The first upper metal patterns 372 formed on the seed layer 370 by theplating process may include a thermal pattern 374 a arranged on thebackside surface 204 of the semiconductor chip 200 and first upperredistribution wirings 376 electrically connected to the core connectionwirings 120. The thermal pattern 374 a may include a metal pattern of agrid shape covering the backside surface 204 of the semiconductor chip200.

Referring to FIG. 30 , a first upper insulation layer 380 may be formedto cover the first surface 102 of the core substrate 100 and thebackside surface 204 of the semiconductor chip 200, and then, the firstupper insulation layer 380 may be patterned to form sixth openings 381that expose the first upper metal patterns 372, respectively. The sixthopenings 381 may expose portions of the thermal pattern 374 a and thefirst upper redistribution wirings 376.

Referring to FIG. 31 , a second upper redistribution wiring layerincluding second upper metal patterns 382 may be formed on the firstupper insulation layer 380. The second upper metal patterns 382 mayinclude second upper redistribution wirings electrically connected tothe first upper redistribution wirings 376 and a metal patternelectrically connected to the thermal pattern 374 a. The metal patternmay include a ground pattern GP.

Then, processes which are the same as or similar to the processesdescribed with reference to FIGS. 20 to 22 may be performed to form anupper redistribution wiring layer including first and second upperinsulation layers 380, 390 and outer connection members 400 on an outersurface of a lower redistribution wiring layer 300.

Then, a sawing process may be performed on the core substrate 100 toform an individual fan-out panel level package including the coresubstrate 100, the lower redistribution wiring layer 300 formed on alower surface of the core substrate 100 and the upper redistributionwiring layer formed on an upper surface of the core substrate 100.

FIG. 32 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments. FIG. 33 is an enlargedcross-sectional view illustrating portion ‘C’ in FIG. 32 . Thesemiconductor package may be substantially the same as or similar to thesemiconductor package described with reference to FIG. 1 except for aconfiguration of a barrier layer. Thus, same reference numerals will beused to refer to the same or like elements and any further repetitiveexplanation concerning the above elements will be omitted.

Referring to FIGS. 32 and 33 , an upper redistribution wiring layer 350of a semiconductor package 12 may include an oxide layer 364 provided ona backside surface 204 of a semiconductor chip 200 and an upper surface132 of a sealing layer 130.

In example embodiments, the oxide layer 364 may be provided to cover theentire backside surface 204 of the semiconductor chip 200. The oxidelayer 364 may have openings that expose third metal wirings 126 of coreconnection wirings 120. A seed layer 370 may be provided on the oxidelayer 364 on the backside surface 204 of the semiconductor chip 200. Theoxide layer 364 and the seed layer 370 may serve as a barrier layerprovided between a thermal pattern 374 and the backside surface 204 ofthe semiconductor chip 200.

As illustrated in FIG. 33 , a thickness T1 of the thermal pattern 374may have a value from 3 μm to 50 μm. A thickness T2 of the seed layer370 may have a value from 0.1 μm to 0.5 μm. A thickness T3 of the oxidelayer 364 may have a value from 0.1 μm to 0.5 μm.

Alternatively, the upper redistribution wiring layer 350 of asemiconductor package 12 may include an adhesive layer instead of theoxide layer. The adhesive layer may include an adhesive film such as adie attach film (DAF). The adhesive layer may further include metalfillers therein capable of improving heat dissipation performance. Acopper foil may be attached on the adhesive layer.

Hereinafter, a method of manufacturing the semiconductor package in FIG.32 will be explained.

FIGS. 34 to 39 are cross-sectional views illustrating a method ofmanufacturing a semiconductor package in accordance with exampleembodiments.

Referring to FIG. 34 , processes which are the same as or similar to theprocesses described with reference to FIGS. 4 to 12 may be performedform a sealing layer 130 covering a first surface 102 of a coresubstrate 100 and exposing a backside surface 204 of the semiconductorchip 200, and then, an oxide layer 364 as a barrier layer may be formedon an upper surface 132 of the sealing layer 130 and the backsidesurface 204 of the semiconductor chip 200.

For example, the oxide layer 364 may be formed on the upper surface 132of the sealing layer 130 and the backside surface 204 of thesemiconductor chip 200. The oxide layer 364 may be formed by a chemicalvapor deposition process. For example, the oxide layer 364 may includesilicon oxide. A thickness of the oxide layer may have a value from 0.1μm to 0.5 μm.

Alternatively, instead of the oxide layer, an adhesive layer may beformed on the upper surface 132 of the sealing layer 130 and thebackside surface 204 of the semiconductor chip 200. The adhesive layermay include an adhesive film such as die attach film (DAF). A copperfoil may be attached on the adhesive layer.

Referring to FIG. 35 , the sealing layer 130 and the oxide layer 364 onthe first surface 102 of the core substrate 100 may be partially removedto form fourth openings 134 that expose third metal wirings 126 of coreconnection wirings 120.

For example, the fourth openings 134 may be formed using a laser.Examples of the laser may be CO₂ laser, YAG laser, excimer laser, UVlaser, etc.

Referring to FIG. 36 , a seed layer 370 may be formed on the third metalwirings 126 of the core connection wirings 120 exposed by the oxidelayer 364 and the fourth openings 134, and then, a photoresist pattern30 having openings that expose the semiconductor chip 200 and portionsof the seed layer on the third metal wirings 126 may be formed on theseed layer 370.

For example, the seed layer 370 may be formed by a sputtering process.The seed layer 370 may include an alloy layer including titanium/copper(Ti/Cu), titanium/palladium (Ti/Pd), titanium/nickel (Ti/Ni),chrome/copper (Cr/Cu) or a combination thereof. A thickness of the seedlayer 370 may have a value from 0.1 μm to 0.5 μm.

A photoresist layer may be formed on to cover the seed layer 370, andthen, an exposure process may be performed on the photoresist layer toform the photoresist pattern 30 having the openings that expose thesemiconductor chip 200 and the portions of the seed layer 370 on thethird metal wirings 126.

Referring to FIGS. 37 and 38 , a plating process may be performed on theseed layer 370 to form a first upper redistribution wiring layerincluding first upper metal patterns 372 including a metal material, thephotoresist pattern may be removed, and then, the seed layer under thephotoresist pattern 30 may be partially etched.

The first upper metal pattern 372 on the seed layer 370 by the platingprocess may include a thermal pattern 374 arranged on the backsidesurface 204 of the semiconductor chip 200 and first upper redistributionwirings 376 electrically connected to the core connection wirings 120.The thermal pattern 374 may include a metal pattern covering thebackside surface 204 of the semiconductor chip 200.

Referring to FIG. 39 , a first upper insulation layer 380 may be formedto cover the first surface 102 of the core substrate 100 and thebackside surface 204 of the semiconductor chip 200, and then, the firstupper insulation layer 380 may be patterned to form sixth openings 381that expose the first upper metal patterns 372, respectively. The sixthopenings 381 may expose portions of the thermal pattern 374 and thefirst upper redistribution wirings 376.

Then, processes which are the same as or similar to the processesdescribed with reference to FIGS. 19 to 22 may be performed to form anupper redistribution wiring layer including first and second upperinsulation layers and outer connection members 400 on an outer surfaceof a lower redistribution wiring layer 300.

Then, a sawing process may be performed on the core substrate 100 toform an individual fan-out panel level package including the coresubstrate 100, the lower redistribution wiring layer 300 formed on alower surface of the core substrate 100 and the upper redistributionwiring layer formed on an upper surface of the core substrate 100.

FIG. 40 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments. The semiconductor package may besubstantially the same as or similar to the semiconductor packagedescribed with reference to FIG. 1 except for an additional secondpackage. Thus, same reference numerals will be used to refer to the sameor like elements and any further repetitive explanation concerning theabove elements will be omitted.

Referring to FIG. 40 , a semiconductor package 13 may include a firstpackage and a second package 600 stacked on the first package. Thesemiconductor package 13 may further include a heat sink 700 stacked onthe second package 600. The first package may include a core substrate100, a semiconductor chip 200, a lower redistribution wiring layer 300and an upper redistribution wiring layer 350. The first package may besubstantially the same as or similar to the unit package described withreference to FIG. 1 .

In example embodiments, the second package 600 may include a secondpackage substrate 610, second and third semiconductor chips 620, 630mounted on the second package substrate 610, and a molding member 642 onthe second package substrate 610 to cover the second and thirdsemiconductor chips 620, 630.

The second package 600 may be stacked on the first package viaconductive connection members 650. For example, the conductiveconnection members 650 may include solder balls, conductive bumps, etc.The conductive connection member 650 may be arranged between a secondupper redistribution wiring 386 and a second bonding pad 614 of thesecond package substrate 610. Accordingly, the first package and thesecond package 6800 may be electrically connected to each other by theconductive connection members 650.

The second and third semiconductor chips 620, 630 may be stacked on thesecond package substrate 610 by adhesive members. Bonding wires 640 mayelectrically connect chip pads 622, 632 of the second and thirdsemiconductor chips 620, 630 to first bonding pads 612 of the secondpackage substrate 610. The second and third semiconductor chips 620, 630may be electrically connected to the second package substrate 610 by thebonding wires 640.

Although the second package 600 including two semiconductor chipsmounted in a wire bonding manner are illustrated in the figure, it maybe understood that the number, the mounting manner, etc. of thesemiconductor chips of the second package may not be limited thereto.

In example embodiments, the heat sink 700 may be provided on the secondpackage 600 to dissipate heat from the first and second packages to theoutside. The heat sink 700 may be adhered on the second package 600 by athermal interface material (TIM) 710.

FIG. 41 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments. The semiconductor package may besubstantially the same as or similar to the semiconductor packagedescribed with reference to FIG. 40 except for a mold substrate providedinstead of a core substrate. Thus, same reference numerals will be usedto refer to the same or like elements and any further repetitiveexplanation concerning the above elements will be omitted.

Referring to FIG. 41 , a semiconductor package 14 may include a firstpackage and a second package 600 stacked on the first package. The firstpackage may include a lower redistribution wiring layer 300, at leastone semiconductor chip 200 arranged on the lower redistribution wiringlayer 300, a mold substrate 500 on an upper surface of the lowerredistribution wiring layer 300 to cover at least a side surface of thesemiconductor chip 200, and an upper redistribution wiring layer 350arranged on an upper surface of the mold substrate 500. The firstpackage may be substantially the same as or similar to the unit packagedescribed with reference to FIG. 32 , except for conductive connectioncolumns 550. The semiconductor package 14 may further include outerconnection members 400 on a lower surface of the lower redistributionwiring layer 300 and a heat sink 700 stacked on the second package 600.

In example embodiments, the first package of the semiconductor package14 may include the mold substrate 500 used as a support member providedin a fan out region surrounding the semiconductor chip 200. The moldsubstrate 500 may serve as a frame surrounding the semiconductor chip200. The conductive connection columns 550 may be provided to penetrateat least a portion of the mold substrate 500 in a region outside thesemiconductor chip 200. The conductive connection column 550 may be amold through via (MTV) that extends from an upper surface 502 to a lowersurface 504 of the mold substrate 500. For example, the conductiveconnection column 550 may be a vertical connection structure thatpenetrates the mold substrate 500.

Hereinafter, a method of manufacturing the semiconductor package in FIG.41 will be explained.

FIGS. 42 to 51 are cross-sectional views illustrating a method ofmanufacturing a semiconductor package in accordance with exampleembodiments.

Referring to FIG. 42 , a seed layer 50 and a photoresist pattern 40having openings 41 for forming conductive connection structures may beformed on a first carrier substrate C1.

In example embodiments, the first carrier substrate C1 may include awafer substrate. The wafer substrate may be used as a base substrate onwhich a plurality of semiconductor chips are arranged and a moldingmember is formed to cover the semiconductor chips. The wafer substratemay have a shape corresponding to a wafer on which semiconductormanufacturing processes are performed.

The wafer substrate may include a redistribution wiring region in whicha lower redistribution wiring layer is formed and a scribed lane region,that is, a cutting region surrounding the redistribution wiring region.As described later, the lower redistribution wiring layer and themolding member formed on the wafer substrate may be cut along thecutting region.

For example, the seed layer 50 may be formed by a sputtering process.The seed layer 50 may include an alloy layer including titanium/copper(Ti/Cu), titanium/palladium (Ti/Pd), titanium/nickel (Ti/Ni),chrome/copper (Cr/Cu) or a combination thereof.

After forming a photoresist layer on the seed layer 50, an exposureprocess may be performed on the photoresist layer to form thephotoresist pattern 40 having the openings 41.

Referring to FIGS. 43 and 44 , a plating process may be performed on theseed layer 50 to form conductive connection columns 550 as theconductive connection structures, the photoresist pattern may beremoved, and then, the seed layer 50 under the photoresist pattern 40may be partially etched.

Referring to FIG. 45 , a semiconductor chip 200 may be arranged on thefirst carrier substrate C1, and then, a mold substrate 500 may be formedto cover the semiconductor chip 200. The semiconductor chip 200 may bearranged such that a front surface on which chip pads 210 of thesemiconductor chip 200 are formed faces the first carrier substrate C1.For example, a height of the semiconductor chip 200 may be less than aheight of the conductive connection column 550.

The mold substrate 500 may be formed on the first carrier substrate C1using a molding material to cover the semiconductor chip 200 and aplurality of the conductive connection columns 550. For example, themold substrate 500 may include epoxy mold compound (EMC). The moldsubstrate 500 may be formed by a molding process, a screen printingprocess, a lamination process, etc.

Referring to FIG. 46 , an upper surface 502 of the mold substrate 500may be planarized to expose a backside surface 204 of the semiconductorchip 200. In such planarization of the upper surface 502 of the moldsubstrate, upper surfaces of the conductive connection columns 550 andthe backside surface 204 of the semiconductor chip 200 may be partiallyremoved together.

The upper surface 502 of the mold substrate 500, the upper surfaces ofthe conductive connection columns 550 and the backside surface 204 ofthe semiconductor chip 200 may be planarized by a grinding process suchas a chemical mechanical polishing process. Thus, the backside surface204 of the semiconductor chip 200 may be located on the same plane asthe upper surface 502 of the mold substrate 500.

Referring to FIGS. 47 to 50 , processes which are the same as or similarto the processes described with reference to FIGS. 34 to 39 may beperformed to form an upper redistribution wiring layer 350 on thebackside surface 204 of the semiconductor chip 200 and the upper surface502 of the mold substrate 500.

As illustrated in FIG. 47 , an oxide layer 364 as a barrier layer may beformed on the backside surface 204 of the semiconductor chip 200 and theupper surface 502 of the mold substrate 500. For example, the oxidelayer 364 may include silicon oxide. A thickness of the oxide layer mayhave a value from 0.1 μm to 0.5 μm.

Alternatively, an adhesive layer may be formed on the backside surface204 of the semiconductor chip 200 and the upper surface 502 of the moldsubstrate 500 instead of the oxide layer. The adhesive layer may includean adhesive film such as a die attach film (DAF). A copper foil may beattached on the adhesive layer.

Then, the oxide layer 364 may be partially removed to form openings thatexpose portions of the upper surfaces of the conductive connectioncolumns 550. For example, the openings may be formed using a laser.Examples of the laser may be CO₂ laser, YAG laser, excimer laser, UVlaser, etc.

Referring to FIG. 48 , a seed layer 370 may be formed on the oxide layer362 and the upper surfaces of the conductive connection columns 550, andthen, a photoresist pattern 30 having openings 31 that expose thesemiconductor chip 200 and portions of the seed layer on the conductiveconnection columns 550 may be formed on the seed layer 370.

Referring to FIG. 49 , a plating process may be performed on the seedlayer 370 to form a first upper redistribution wiring layer includingfirst upper metal patterns 372 including a metal material, thephotoresist pattern 30 may be removed, and then, the seed layer 370under the photoresist pattern 30 may be etched.

The first upper metal patterns 372 formed on the seed layer 370 by theplating process may include a thermal pattern 374 arranged on thebackside surface 204 of the semiconductor chip 200 and first upperredistribution wirings 376 electrically connected to the conductiveconnection columns 550. The thermal pattern 374 may include a metalpattern covering the backside surface 204 of the semiconductor chip 200.

As illustrated in FIG. 50 , a first upper insulation layer 380 havingopenings that expose the first upper metal patterns 372 may be formed,second upper metal patterns 382 may be formed on the first upperinsulation layer 380, a second upper insulation layer 390 may be formedon the first upper insulation layer 380, and then, the second upperinsulation layer 390 may be patterned to form seventh openings 391 thatexpose portions of the second upper metal patterns 382.

Referring to FIG. 51 , processes which are the same as or similar to theprocesses described with reference to FIGS. 8 to 10 may be performed toform a lower redistribution wiring layer 300 on the front surface 202 ofthe semiconductor chip 200 and the lower surface 504 of the moldsubstrate 500. The lower redistribution wiring layer may include firstredistribution wirings 302 electrically connected to the chip pads 210of the semiconductor chip 200 and the conductive connection columns 550,respectively.

Then, outer connection members 400 may be formed on the lowerredistribution wiring layer 300 to be electrically connected to thefirst redistribution wirings 302, respectively. For example, a solderball as the outer connection member may be disposed on the portion of athird lower redistribution wiring 332. The portion of the third lowerredistribution wiring 332 may serve as a landing pad, that is, a packagepad.

Thus, semiconductor manufacturing processes may be performed on thewafer substrate having the same size as each die of a wafer to form thelower redistribution wiring layer 300 having fan-out type solder balllanding pads.

Then, the lower redistribution wiring layer 300 and the mold substrate500 may be cut to form an individual semiconductor package. The lowerredistribution wiring layer 300 may be cut by a sawing process to forman individual fan-out package.

The semiconductor package may include semiconductor devices such aslogic devices or memory devices. The semiconductor package may includelogic devices such as central processing units (CPUs), main processingunits (MPUs), or application processors (APs), or the like, and volatilememory devices such as DRAM devices, HBM devices, or non-volatile memorydevices such as flash memory devices, PRAM devices, MRAM devices, ReRAMdevices, or the like.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in example embodiments withoutmaterially departing from the novel teachings and advantages of thepresent invention. Accordingly, all such modifications are intended tobe included within the scope of example embodiments as defined in theclaims.

What is claimed is:
 1. A semiconductor package, comprising: a supportmember; a semiconductor chip arranged in the support member such that afront surface and a backside surface of the semiconductor chip areexposed from a second surface of the support member and a first surfaceopposite to the second surface, respectively; a lower redistributionwiring layer covering the second surface of the support member and thefront surface of the semiconductor chip, and including a plurality offirst redistribution wirings electrically connected to a plurality ofchip pads provided at the front surface of the semiconductor chip andvertical connection structures of the support member, respectively; andan upper redistribution wiring layer covering the first surface of thesupport member and the backside surface of the semiconductor chip, andincluding a plurality of second redistribution wirings electricallyconnected to the vertical connection structures and a metallic thermalpattern provided on the exposed backside surface of the semiconductorchip.
 2. The semiconductor package of claim 1, further comprising: asealing layer covering the first surface of the support member andexposing the backside surface of the semiconductor chip.
 3. Thesemiconductor package of claim 2, wherein the backside surface of thesemiconductor chip is higher than the first surface of the supportmember, and wherein the backside surface of the semiconductor chip iscoplanar with an upper surface of the sealing layer.
 4. Thesemiconductor package of claim 3, wherein the upper redistributionwiring layer further includes a protective layer pattern on an uppersurface of the sealing layer.
 5. The semiconductor package of claim 1,wherein the upper redistribution wiring layer further includes a barrierlayer provided between the thermal pattern and the backside surface ofthe semiconductor chip.
 6. The semiconductor package of claim 5, whereinthe barrier layer includes at least one of a seed layer, an oxide layer,and an adhesive layer.
 7. The semiconductor package of claim 1, whereinthe thermal pattern includes a first thickness, and wherein each of theplurality of first redistribution wirings has a second thickness lessthan the first thickness.
 8. The semiconductor package of claim 7,wherein the first thickness of the thermal pattern has a value from 3 μmto 50 μm, and wherein the second thickness of each of the plurality offirst redistribution wirings has a value from 3 μm to 8 μm.
 9. Thesemiconductor package of claim 1, wherein the plurality of secondredistribution wirings includes a first upper redistribution wiring anda second upper redistribution wiring stacked in at least two levels. 10.The semiconductor package of claim 9, wherein the upper redistributionwiring layer further includes a ground pattern coplanar with the secondupper redistribution wiring and electrically connected to the thermalpattern.
 11. A semiconductor package, comprising: a substrate having acavity; at least one semiconductor chip arranged within the cavity, andhaving a plurality of chip pads provided at a front surface of thesemiconductor chip; a sealing layer covering a first surface of thesubstrate, and filling the cavity such that a backside surface of thesemiconductor chip is exposed from the sealing layer; a lowerredistribution wiring layer covering a second surface of the substrateopposite to the first surface, and including a plurality of firstredistribution wirings electrically connected to the plurality of chippads; an upper redistribution wiring layer covering the first surface ofthe substrate, and including a plurality of second redistributionwirings electrically connected to a plurality of connection wirings anda thermal pattern provided on the exposed backside surface of thesemiconductor chip; and a plurality of outer connection members arrangedon an outer surface of the lower redistribution wiring layer andelectrically connected to the plurality of first redistribution wirings,wherein the backside surface of the semiconductor chip is coplanar withan upper surface of the sealing layer, and a first thickness of thethermal pattern has a value from 3 μm to 50 μm.
 12. The semiconductorpackage of claim 11, wherein the upper redistribution wiring layerfurther includes a barrier layer provided between the thermal patternand the backside surface of the semiconductor chip.
 13. Thesemiconductor package of claim 12, wherein the barrier layer includes atleast one of a seed layer, an oxide layer, and an adhesive layer. 14.The semiconductor package of claim 11, wherein the plurality of secondredistribution wirings include a first upper redistribution wiring and asecond upper redistribution wiring stacked in two levels, and whereinthe thermal pattern is coplanar with the first upper redistributionwiring.
 15. The semiconductor package of claim 14, wherein the upperredistribution wiring layer further includes a ground patternelectrically connected to the thermal pattern.
 16. A semiconductorpackage, comprising: a lower redistribution wiring layer including aplurality of first redistribution wirings stacked in two levels; asemiconductor chip arranged on the lower redistribution wiring layer,and having a plurality of chip pads provided at a front surface to beelectrically connected to the plurality of first redistribution wirings;a support member on the lower redistribution wiring layer to surroundthe semiconductor chip, and exposing a backside surface of thesemiconductor chip; and an upper redistribution wiring layer on thesupport member, and including a plurality of second redistributionwirings electrically connected to a plurality of vertical connectionstructures that penetrate at least a portion of the support member, anda metallic thermal pattern provided on the exposed backside surface ofthe semiconductor chip.
 17. The semiconductor package of claim 16,wherein the upper redistribution wiring layer further includes a barrierlayer provided between the thermal pattern and the backside surface ofthe semiconductor chip.
 18. The semiconductor package of claim 17,wherein the barrier layer includes at least one of a seed layer, anoxide layer, and an adhesive layer.
 19. The semiconductor package ofclaim 16, wherein a thickness of the thermal pattern has a value from 3μm to 50 μm.
 20. The semiconductor package of claim 16, wherein theplurality of second redistribution wirings include a first upperredistribution wiring and a second upper redistribution wiring stackedin at least two levels, and wherein the thermal pattern is coplanar withthe first upper redistribution wiring.